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PD - 5.026
CPV362MF
IGBT SIP MODULE
Features
* * * * Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
3 Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 1
Fast IGBT
D3 15
Q5
D5 16 D6
10 Q6
Product Summary
7
13
19
Output Current in a Typical 5.0 kHz Motor Drive 4.6 ARMS per phase (1.4 kW total) with TC = 90C, TJ = 125C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE VISOL PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 8.8 4.8 26 26 3.4 26 20 2500 23 9.1 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf*in (0.55-0.8 N*m)
Units
V
A
V VRMS W
C
Thermal Resistance
Parameter
RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module
Typ.
-- -- 0.1 20 (0.7)
Max.
5.5 9.0 -- --
Units
C/W g (oz)
Revision 1
C-141
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CPV362MF
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Para meter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Temperature Coeff. of Breakdown Voltage -- 0.72 Collector-to-Emitter Saturation Voltage -- 1.6 -- 2.0 -- 1.7 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -11 Forward Transconductance 2.9 5.0 Zero Gate Voltage Collector Current -- -- -- -- Diode Forward Voltage Drop -- 1.4 -- 1.3 Gate-to-Emitter Leakage Current -- --
Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 1.0mA 1.8 IC = 4.8A VGE = 15V -- V IC = 8.8A See Fig. 2, 5 -- IC = 4.8A, T J = 150C 5.5 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 9.0A 250 A VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, T J = 150C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, T J = 150C 500 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time -- Diode Peak Reverse Recovery Current -- Diode Reverse Recovery Charge -- Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 55 -- 4.5 -- 124 -- -- Typ. 16 2.4 7.6 24 13 160 310 0.22 0.40 0.62 25 18 210 600 1.07 340 63 5.9 37 90 3.5 8.0 65 360 240 210 Max. Units Conditions 21 IC = 9.0A 3.4 nC VCC = 400V 10 See Fig. 8 -- TJ = 25C -- ns IC = 9.0A, V CC = 480V 270 VGE = 15V, R G = 50 600 Energy losses include "tail" and -- diode reverse recovery -- mJ See Fig. 9, 10, 11, 18 1.04 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 9.0A, V CC = 480V -- VGE = 15V, R G = 50 -- Energy losses include "tail" and -- mJ diode reverse recovery -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 55 ns TJ = 25C See Fig. TJ = 125C 14 IF = 8.0A 50 A TJ = 25C See Fig. TJ = 125C 15 VR = 200V 138 nC TJ = 25C See Fig. TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17
Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(VCES), VGE=20V, L=10H, RG= 50, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
C-142
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CPV362MF
8 2.5
6
1.9
Total O utpu t P ow e r (kW )
20
Lo ad C urrent (A )
4
1.2
S
2
TC = 90C TJ = 125C Power Factor = 0.8 Modulation Depth = 0.8 VC C = 60% of Rated Voltage
0.1 1 10 100
0.6
0
0
f, F re quency (kH z)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
100
100
I C , C ollector-to-E mitte r C urren t (A )
TJ = 25 C TJ = 25 C TJ = 1 50 C
I C , C ollector-to-E mitter C urrent (A )
TJ = 1 50 C
10
10
1
0.1 0.1 1
V G E = 15 V 2 0 s P U L S E W ID TH
10
1 5 10
V C C = 1 00 V 5 s P UL S E W ID TH
15
V C E , C o llector-to-Em itter V oltage (V)
V G E , G ate-to-E m itter V olta g e (V )
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-143
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CPV362MF
16
VC E , C o lle ctor-to-E m itter V oltage (V )
V G E = 15 V
4.0
Ma xim um D C C ollecto r C urren t (A )
VG E = 1 5 V 80 s P UL S E W ID TH
I C = 18 A
3.5
12
3.0
8
2.5
I C = 9.0 A
2.0
4
I C = 4.5A
1.5
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160
T C , C ase Tem perature (C )
TC , C ase Tem perature (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
T h e rm a l R e sp o n s e (Z thJC )
D = 0 .5 0
1
0 .2 0 0 .1 0 0 .0 5 0 .0 2 0 .0 1
PD M
0.1
S IN G L E P U L S E (T H E R M A L R E S P O N S E )
N o te s : 1 . D u ty fa c to r D = t
t
1 t2
1
/t
2
0.01 0.000 01
2 . P e a k T J = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , R e c ta n g u lar P u ls e D u ra tio n (s e c )
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-144
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CPV362MF
700
600
C, C apacitance (pF)
500
Cies Coes
400
300
V G E , G ate-to-E m itter V oltage (V )
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
20
V C E = 4 00 V I C = 9.0A
16
12
8
200
Cres
4
100
0 1 10 100
0 0 4 8 12 16 20
V C E , C o llector-to-Em itter V oltage (V)
Q g , Total G ate C harge (nC )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
1 .3 6
1 .3 4
To ta l S w itc hing Lo sse s (m J)
Total S w itching Lo sse s (m J)
VC C VG E TC IC
= 48 0 V = 15 V = 25 C = 9.0A
10
R G = 50 V GE = 15 V V CC = 48 0 V I C = 1 8A I C = 9.0A
1 .3 2
1 .3 0
1
I C = 4.5 A
1 .2 8
1 .2 6
1 .2 4 20 30 40 50 60
0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160
R G , G ate R esistance ( )
W
TC , C ase Tem peratu re (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
C-145
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CPV362MF
4.0
3.0
I C , C o lle c to r-to -E m itte r C u rre n t (A )
Total Sw itching Losses (m J )
RG TC V CC VGE
= 50 = 150 C = 4 80 V = 15 V
100
VG E E 20 V G= T J = 125 C
S A FE O P E RA TING A RE A
10
2.0
1.0
0.0 4 8 12 16 20
1 1 10 100 1000
I C , C o llector-to -E m itte r Current (A )
V C E , C o lle cto r-to-E m itte r V olta g e (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
10
TJ = 150C TJ = 125C TJ = 25C
1
0.1 0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-146
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CPV362MF
100 100
VR = 200V TJ = 125C TJ = 25C
80
VR = 200V TJ = 125C TJ = 25C
IF = 16A
t rr - (ns)
60
IF = 8.0A
I IRRM - (A)
IF = 16A
10
40
IF = 8.0A I F = 4.0A
IF = 4.0A
20
0 100
di f /dt - (A/s)
1000
1 100
1000
di f /dt - (A/s)
Fig. 14 - Typical Reverse Recovery vs. di/dt f
Fig. 15 - Typical Recovery Current vs. di/dt f
500
10000
VR = 200V TJ = 125C TJ = 25C
400
VR = 200V TJ = 125C TJ = 25C
300
di(rec)M/dt - (A/s)
Q RR - (nC)
I F = 16A
200
IF = 4.0A
1000
IF = 8.0A IF = 16A
I F = 8.0A
100
IF = 4.0A
0 100 100 100
di f /dt - (A/s)
1000
1000
di f /dt - (A/s)
Fig. 16 - Typical Stored Charge vs. di/dt f
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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CPV362MF
Same type device as D.U.T. 90% Vge +Vge
Vce 80% of Vce 430F D.U.T. Ic 10% Vce Ic 5% Ic td(off) tf 90% Ic
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Eoff =
t1+5S Vce ic dt t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 10% Irr Vcc Vpk Irr trr Ic
Qrr =
trr id dt tx
t4 Erec = Vd id dt t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 5 - IMS-2 (13-pin) Section D - page D-14
C-148
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